Adsorption of Hydrogen at the GaN(0001̅) Surface: An Ab Initio Study-Reference-Cited by-同舟云学术

Adsorption of Hydrogen at the GaN(0001̅) Surface: An Ab Initio Study

Published:2015-05-15 Issue:21 Volume:119 Page:11563-11569
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Ptasinska Maria¹,Piechota Jacek¹,Krukowski Stanisław¹²

Affiliation:

1. Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, 02-106 Warsaw, Poland

2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

Funder

Ministerstwo Nauki i Szkolnictwa Wyzszego

European Regional Development Fund

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b00836

Reference67 articles.

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3. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

4. Hole Compensation Mechanism of P-Type GaN Films

5. Nakamura, S.; Fasol, G.; Pearton, S. J.The Blue Laser Diodes;Springer:New York, 2000; pp7–29.

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