The Effect of Functionalization on Spin-Polarized Transport of Gallium Nitride–Based Magnetic Tunnel Junctions
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s10948-019-05307-1.pdf
Reference43 articles.
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2. S. S. P. Parkin, “Spintronic Materials and Devices: Past, Present and Future,” IEDM Technical Digest, IEEE International Electron Devices Meeting, pp. 903-906, 2004. https://doi.org/10.1109/IEDM.2004.1419328
3. Y. Kato, J. Berezovsky and D. D. Awschalom, “Spintronics: semiconductors, molecules and quantum information,” IEDM Technical Digest, IEEE International Electron Devices Meeting, pp. 537-538, 2004. https://doi.org/10.1109/IEDM.2004.1419212
4. Julliere, M.: Tunneling between ferromagnetic films. Phys. Lett. A. 54(3), 225–226 (1975)
5. Ikeda, S., Hayakawa, J., Lee, Y.M., Matsukura, F., Ohno, Y., Hanyu, T., Ohno, H.: Magnetic tunnel junctions for spintronic memories and beyond. IEEE Trans. Electron Devices. 54(5), 991–1002 (2007)
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