Atomistic mechanism of the initial oxidation of the clean Si(100)-(2×1) surface by O2 and SiO2 decomposition
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1456036
Reference43 articles.
1. Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces
2. The reaction of atomic oxygen with Si(100) and Si(111)
3. The reaction of atomic oxygen with Si(100) and Si(111)
4. Direct measurement of reaction kinetics for the decomposition of ultrathin oxide on Si(001) using scanning tunneling microscopy
5. Kinetics of the adsorption of O2 and of the desorption of SiO on Si(100): A molecular beam, XPS, and ISS study
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