Reactions of Atomic Hydrogen with the Hydroxide- and Amine-Functionalized Si(100)-2×1 Surfaces: Accurate Modeling of Hydrogen Abstraction Reactions Using Density Functional Theory-Reference-Cited by-同舟云学术

Reactions of Atomic Hydrogen with the Hydroxide- and Amine-Functionalized Si(100)-2×1 Surfaces: Accurate Modeling of Hydrogen Abstraction Reactions Using Density Functional Theory

Published:2014-04-11 Issue:16 Volume:118 Page:8379-8386
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Ferguson Glen Allen¹,Ramabhadran Raghunath O.¹,Than Christopher Trong-Linh¹,Paradise Ranjani Krishnan¹,Raghavachari Krishnan¹

Affiliation:

1. Department of Chemistry, Indiana University, Bloomington, Indiana 47405, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp4128258

Reference55 articles.

1. Organic functionalization of group IV semiconductor surfaces: principles, examples, applications, and prospects

2. Attaching Organic Layers to Semiconductor Surfaces

3. Organometallic Chemistry on Silicon and Germanium Surfaces

4. The surface as molecular reagent: organic chemistry at the semiconductor interface

5. The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor

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