Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93117, USA
2. Department of Chemistry and Biochemistry, University of California, Santa Barbara, Santa Barbara, California 93106, USA
Abstract
Funder
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0093264
Reference32 articles.
1. 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
2. Type II mid‐infrared quantum well lasers
3. A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
4. AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/>or=630 nm band) with a multiquantum barrier grown on misoriented substrates
5. GaSbBi/GaSb quantum well laser diodes
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1. Integrated photonics beyond communications;Applied Physics Letters;2023-12-04
2. Non-Planar Nano-Epitaxy of InGaN Quantum-Well Emitters for Green-Yellow Semiconductor Lasers;Frontiers in Optics + Laser Science 2023 (FiO, LS);2023
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