Author:
Wood Michael G.,Rice Anthony,Lee Stephen R.,Gunning Brendan P.,Crawford Mary H.,Lu Ping,Sovinec Courtney L. H.,Grine Alejandro J.,DeJong Elizabeth,Feezell Daniel,Serkland Darwin K.
Abstract
We report non-planar regrowth of InGaN quantum wells on triangular InGaN buffer layers grown on sub-200nm-wide GaN ridges. Photo-pumped internal quantum efficiencies above 20% at yellow wavelengths hold promise for semiconductor laser gain regions.