Simulation Study on Temperature Field of Packaged High Power GaN Laser Diodes
Author:
Affiliation:
1. Shihezi University,College of Sciences, Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology,Department of Physics,Shihezi,China
Funder
National Natural Science Foundation of China
Shihezi University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492440.pdf?arnumber=10492440
Reference8 articles.
1. Dynamic opto-electro-thermal characterization of solid state lighting devices: measuring the power conversion efficiency at high current densities
2. Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes
3. Optimization of the overlap efficiency factor for power scaling in visible Pr:YLF laser at 607 nm pumped by fiber-coupled GaN laser diodes
4. Edge-emitting blue laser diode with high CW wall-plug efficiency of 50 %
5. Improved performance of GaN-based blue laser diodes using asymmetric multiple quantum wells without the first quantum barrier layer
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