Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements-Reference-Cited by-同舟云学术

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Published:2013-03-14 Issue:10 Volume:113 Page:103504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kirste Ronny,Hoffmann Marc P.,Tweedie James,Bryan Zachary,Callsen Gordon,Kure Thomas,Nenstiel Christian,Wagner Markus R.,Collazo Ramón,Hoffmann Axel,Sitar Zlatko

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4794094

Reference28 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

3. Self-compensation in Mg doped p-type GaN grown by MOCVD

4. Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

5. Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

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