Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN-Reference-Cited by-同舟云学术

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Published:2011-11 Issue:9 Volume:110 Page:093503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kirste Ronny,Collazo Ramón,Callsen Gordon,Wagner Markus R.,Kure Thomas,Sebastian Reparaz Juan,Mita Seji,Xie Jinqiao,Rice Anthony,Tweedie James,Sitar Zlatko,Hoffmann Axel

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3656987

Reference24 articles.

1. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

2. Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

3. Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures

4. Origin of the efficient light emission from inversion domain boundaries in GaN

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