Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO
Author:
Affiliation:
1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, 701 Taiwan
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4960525
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