High performance ultra-low energy RRAM with good retention and endurance-Reference-Cited by-同舟云学术

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High performance ultra-low energy RRAM with good retention and endurance

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
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Author:

Cheng C. H.,Tsai C. Y.,Chin Albert,Yeh F. S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703392.pdf?arnumber=5703392

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bipolar resistive switching behavior and endurance in RF-sputtered bilayer HfO2/ZrO2 resistive random access memory;Emergent Materials;2023-11-08

2. A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing;APL Materials;2023-09-01

3. Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy;Applied Materials Today;2023-04

4. Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process;IEEE Transactions on Electron Devices;2023-03

5. Essential Characteristics of Memristors for Neuromorphic Computing;Advanced Electronic Materials;2022-10-25

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