Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process
Author:
Affiliation:
1. School of Mechanical Engineering, Dalian University of Technology, Dalian, China
2. Xiamen Industrial Technology Research Institute, Xiamen, China
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10053598/10026249.pdf?arnumber=10026249
Reference17 articles.
1. Impact of RRAM Read Fluctuations on the Program-Verify Approach
2. Investigation of verify-programming methods to achieve 10 million cycles for 50 nm HfO2 ReRAM;higuchi;Proc 4th IEEE Int Memory Workshop,2012
3. A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations
4. On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization
5. Intrinsic program instability in HfO2 RRAM and consequences on program algorithms
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