Gradual conductance modulation by defect reorganization in amorphous oxide memristors-Reference-Cited by-同舟云学术

Gradual conductance modulation by defect reorganization in amorphous oxide memristors

Published:2023 Issue:12 Volume:10 Page:5643-5655
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Li Siqin¹,Du Jigang²,Lu Bojing¹,Yang Ruqi¹,Hu Dunan¹,Liu Pingwei²,Li Haiqing³,Bai Jingsheng⁴,Ye Zhizhen¹,Lu Jianguo¹^ORCID

Affiliation:

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China

2. College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China

3. School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China

4. Sinoma Institute of Materials Research (Guang Zhou) Co., Ltd (SIMR), Guangzhou 510530, China

Abstract

The gradual switching in a-ZATO indicates that the filaments generated by reorganization of oxygen vacancies are more conductive than the initial LRS. The special relaxation model reveals the diffusion of these vacancies in orthogonal directions.

Funder

National Natural Science Foundation of China

Key Research and Development Program of Zhejiang Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MH/D3MH01035J

Reference63 articles.

1. How we predicted the memristor

2. Scalable Al ₂ O ₃ –TiO ₂ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices