Scalable Al <sub>2</sub> O <sub>3</sub> –TiO <sub>2</sub> Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices-Reference-Cited by-同舟云学术

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Scalable Al ₂ O ₃ –TiO ₂ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Published:2022-11-14 Issue:2 Volume:9 Page:2200800
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Li Yang¹²,Wang Wei¹²,Zhang Di³,Baskin Maria¹,Chen Aiping³,Kvatinsky Shahar¹^ORCID,Yalon Eilam¹^ORCID,Kornblum Lior¹^ORCID

Affiliation:

1. The Andrew and Erna Viterbi Faculty of Electrical and Computer Engineering Technion – Israel Institute of Technology Haifa 3200003 Israel

2. Peng Cheng Laboratory Shenzhen 518000 China

3. Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA

Funder

U.S. Department of Energy

Office of Science

Israel Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200800

Reference42 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Superconducting Interfaces Between Insulating Oxides

3. Physics of SrTiO3-based heterostructures and nanostructures: a review

4. Two-Dimensional Electron Gas at LaAlO3/SrTiO3 Interfaces

5. Electron mobility in oxide heterostructures

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