Rate constants for the reaction of H2 with defects at the SiO2/Si(111) interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373486
Reference12 articles.
1. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
2. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
3. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface
4. Kinetics ofH2passivation ofPbcenters at the (111) Si-SiO2interface
5. Comparative analysis of the H2 passivation of interface defects at the interface using electron spin resonance
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1. Advanced Analysis of Silicon Insulator Interface Traps in MOSFET's with SiO2 and HfO2 as Gate Dielectrics;ECS Transactions;2009-05-15
2. Hydrogen Passivation of Luminescence-Quenching Defects in SiNanocrystals;Journal of the Korean Physical Society;2008-11-15
3. Maximizing light emission from silicon nanocrystals – The role of hydrogen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
4. Passivation of Si nanocrystals in SiO2: Atomic versus molecular hydrogen;Applied Physics Letters;2003-12-29
5. Kinetics ofH2passivation of Si nanocrystals inSiO2;Physical Review B;2003-10-02
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