Comparative analysis of the H2 passivation of interface defects at the interface using electron spin resonance
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Characterization of Si/SiO2 interface defects by electron spin resonance
2. MOS interface states: overview and physicochemical perspective
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface
5. Electron spin resonance of [11̄1], [1̄11], and [111̄] oriented dangling orbitalPb0defects at the (111) Si/SiO2interface
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Passivation and Depassivation of Si–SiO[sub 2] Interfaces with Atomic Hydrogen;Journal of The Electrochemical Society;2009
2. Low-damage fabrication of high aspect nanocolumns by using neutral beams and ferritin-iron-core mask;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
3. Electron states at the Si-SiO2 boundary (Review);Semiconductor physics, quantum electronics and optoelectronics;2005-12-15
4. Capacitance-voltage study of hydrogenated silicon-oxide-silicon structures fabricated by wafer bonding;2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551);2004
5. Kinetics ofH2passivation of Si nanocrystals inSiO2;Physical Review B;2003-10-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3