Effects of donor doping on deep traps in In0.5Ga0.5P grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360390
Reference17 articles.
1. Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes
2. MBE-grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 200
3. A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
4. Deep donor levels (DXcenters) in III‐V semiconductors
5. Observation of Donor-Related Deep Levels in GaxIn1-xP (0.52≤x≤0.71)
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1. Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications;Journal of Applied Physics;2023-08-08
2. Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy;Journal of Applied Physics;2001-04-15
3. Effect of Te doping on electron traps in In0.5Ga0.5P;Journal of Materials Science: Materials in Electronics;2001
4. Characteristics of electron traps in Si-doped Ga0.51In0.49P and electrical properties of modulation doped GaInP/InGaAs/GaAs heterostructures;Thin Solid Films;1999-01
5. Gas source molecular beam epitaxy growth and characterization of modulation-doped field-effect transistor structures;Semiconductor Science and Technology;1997-11-01
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