Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1353559
Reference10 articles.
1. GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results
2. Noise in channel doped GaInP/InGaAs HFET devices
3. Defects in epitaxial Si‐doped GaInP
4. Effect of doping on electron traps in metalorganic molecular‐beam epitaxial GaxIn1−xP/GaAs heterostructures
5. Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy
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