Electron dynamics in nearly pinched‐off GaAs field effect transistor operation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91640
Reference3 articles.
1. Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors
2. Drain conductance of junction gate FET's in the hot electron range
3. Current-voltage characteristics, small-signal parameters, and switching times of GaAs FET's
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1. GaAs MESFET model for circuit simulation;International Journal of Electronics;1989-03
2. Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices;The Physics of Submicron Semiconductor Devices;1988
3. Modelling of Sub-Micron Devices;The Physics of Submicron Semiconductor Devices;1988
4. Performance analysis of sub-micron gate GaAs MESFETs;Solid-State Electronics;1987-06
5. Ballistic and overshoot electron transport in bulk semiconductors and in submicronic devices;Journal of Applied Physics;1983-01
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