1. Boittiaux, B., Constant, E., Reggiani, L., Brunetti, R., Jacoboni, C., 1982, Appl. Phys. Lett 40:5, 407.
2. Littlejohn, M.A., Hauser, J.R., Glisson, T.H., J. Appl. Phys., 1977 48 NO 11 pp 4587-4590.
3. Ghis, A., Constant, E., Boittiaux, B., January 1983, J. Appl. Phys. 54:1.
4. The results obtained by the study versus time are plotted versus the distance d travelled by the electron by using the relation: Monte Carlo simulation is carried out with a nonhomogeneous semiconductor where the space pulse of electric field is obtained from the study versus time. Ohmic contacts are assumed on each side of the nonhomogeneous semiconductor and consequently, the number of studies electrons remains constant.
5. Deblock, M., Fauquemberque, R., Constant, E., Boittiaux, B., 1980, Appl. Phys. Lett. 36, 756.