GaAs MESFET model for circuit simulation
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207218908925396
Reference40 articles.
1. Modelling the DC characteristics of GaAs MESFETs for CAD
2. Technology Independent Device Modeling for Simulation of Integrated Circuits for FET Technologies
3. The “barrier mode” behaviour of a junction FET at low drain currents
4. Modeling of a submicrometer gate field‐effect transistor including effects of nonstationary electron dynamics
5. Electron drift velocity versus electric field in GaAs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's;IEEE Transactions on Electron Devices;1993-06
2. Model for photo-induced long-term drain current transients in GaAs MESFETs;International Journal of Electronics;1990-05
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