Current-voltage characteristics, small-signal parameters, and switching times of GaAs FET's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31777/01479538.pdf?arnumber=1479538
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2. MESFET's—Modelling and Fabrication Technology;IETE Technical Review;1997-11
3. MESFET Devices;Microwave Semiconductor Devices;1991
4. Subthreshold conduction in uniformly doped epitaxial GaAs MESFETs;IEEE Transactions on Electron Devices;1989-07
5. Traveling-wave inverted-gate field-effect transistors: concept, analysis, and potential;IEEE Transactions on Microwave Theory and Techniques;1989-06
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