Subthreshold conduction in uniformly doped epitaxial GaAs MESFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/1331/00030931.pdf?arnumber=30931
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low Voltage/Low Power Microwave Electronics;RF and Microwave Applications and Systems;2007-12-22
2. Low Voltage/Low Power Microwave Electronics;RF and Microwave Semiconductor Device Handbook;2002-10-28
3. Electrostatic and current transport properties ofn+/semi‐insulating GaAs junctions;Journal of Applied Physics;1993-10
4. Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates;IEEE Electron Device Letters;1991-10
5. A diffusion model of subthreshold current for GaAs MESFETs;Solid-State Electronics;1991-02
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