Observation of metal–oxide–semiconductor transistor operation using scanning capacitance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125002
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1. Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions
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5. Challenges in hardening technologies using shallow-trench isolation
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