Scanning Capacitance Microscopy
Author:
Nakagiri Nobuyuki
Publisher
Springer Singapore
Reference6 articles.
1. Barrett, R.C., Quate, C.F.: Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy. J. Appl. Phys. 70, 2725 (1991) 2. Yamamoto, T., Suzuki, Y., Miyashita, M., Sugimura, H., Nakagiri, N.: Development of a metal patterned cantilever for scanning capacitance microscopy and its application to the observation of semiconductor devices. J. Vac. Sci. Technol. B15, 1547 (1997) 3. Nakagiri, N., Yamamoto, T., Sugimura, H., Suzuki, Y.: Application of scanning capacitance microscopy to semiconductor devices. J. Vac. Sci. Technol. B14, 887 (1996) 4. Yamamoto, T., Suzuki, Y., Sugimura, H., Nakagiri, N.: SiO2/Si system studied by scanning capacitance microscopy. Jpn. J. Appl. Phys. 35, 3793 (1996) 5. Takasaki, Y., Yamamoto, T.: Cross-section analysis of electric devices by scanning capacitance microscope. Microelectronics Reliability. 39(6–7), 987 (1999)
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