Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1616195
Reference8 articles.
1. Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs
2. Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern
3. Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown
4. Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient
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