Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1400083
Reference5 articles.
1. Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors
2. Reliability: a possible showstopper for oxide thickness scaling?
3. A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction
4. Degradation and hard breakdown transient of thin gate oxides in metal–SiO2–Si capacitors: Dependence on oxide thickness
5. Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
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