Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal-Reference-Cited by-同舟云学术

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Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal

Published:2011-12-05 Issue:23 Volume:99 Page:232909
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu W. H.,Pey K. L.,Wu X.,Raghavan N.,Padovani A.,Larcher L.,Vandelli L.,Bosman M.,Kauerauf T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3669525

Reference23 articles.

1. Resistive switching in transition metal oxides

2. Switching properties of thin Nio films

3. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

4. Resistance switching in HfO2 metal-insulator-metal devices

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1. Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes;ACS Applied Materials & Interfaces;2016-05-31

2. Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications;Applied Surface Science;2013-07

3. Temperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-03

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