Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes
Author:
Affiliation:
1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
2. Department of Chemistry, Stanford University, Stanford, California 94305, United States
Funder
National Science Foundation
Stanford University
Global Climate and Energy Project
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b03688
Reference36 articles.
1. Electrochemical Photolysis of Water at a Semiconductor Electrode
2. Thin-Film Materials for the Protection of Semiconducting Photoelectrodes in Solar-Fuel Generators
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4. Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes
5. Amorphous TiO 2 coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation
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