Transmission electron microscopy assessment of conductive-filament formation in Ni–HfO2–Si resistive-switching operational devices-Reference-Cited by-同舟云学术

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Transmission electron microscopy assessment of conductive-filament formation in Ni–HfO2–Si resistive-switching operational devices

Published:2017-12-13 Issue:1 Volume:11 Page:014101
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Martín Gemma,González Mireia B.,Campabadal Francesca,Peiró Francesca,Cornet Albert,Estradé Sònia

Funder

Ministerio de Economía y Competitividad

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=1/a=014101/pdf

Reference30 articles.

1. The missing memristor found

2. Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

3. Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

4. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

5. Memristive switching mechanism for metal/oxide/metal nanodevices

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3. Understanding the Anisotropy in the Electrical Conductivity of CuPt_B-type Ordered GaInP Thin Films by Combining In Situ TEM Biasing and First Principles Calculations;ACS Applied Electronic Materials;2022-07-14

4. A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications;Solid-State Electronics;2021-12

5. Capacitance Electrochemical pH Sensor Based on Different Hafnium Dioxide (HfO2) Thicknesses;Chemosensors;2021-01-10

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