Inversion domains in AlN grown on (0001) sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1616191
Reference16 articles.
1. GaN and Related Materials for Device Applications
2. Low‐temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering
3. Two-step Process for the Metalorganic Chemical Vapor Deposition Growth of High Quality AlN Films on Sapphire
4. Inversion Domain Boundaries in Aluminum Nitride
5. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
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2. Control of Polarity of AlN Grown on Sapphire Substrate and Growth with Both Al‐ and N‐Polarities;physica status solidi (b);2023-04-19
3. Improved Crystallinity of Annealed 0002 AlN Films on Sapphire Substrate;Materials;2023-03-14
4. Evaluations of the microstructures at the interface between the semipolar (101̄3) AlN epilayer and the m-plane (101̄0) sapphire substrate;CrystEngComm;2023
5. Annihilation of Nanoscale Inversion Domains in Nitrogen-Polar AlN under High-Temperature Annealing;Crystal Growth & Design;2022-11-30
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