I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

Published:2016-09-26 Issue:13 Volume:109 Page:133509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lang A. C.¹,Hart J. L.¹,Wen J. G.²,Miller D. J.²,Meyer D. J.³,Taheri M. L.¹

Affiliation:

1. Department of Materials Science and Engineering, Drexel University, 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USA

2. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA

3. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA

Funder

Argonne National Laboratory

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4963156

Reference49 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. N-polar GaN epitaxy and high electron mobility transistors

3. Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

4. Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

5. AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

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1. Understanding Interfaces in AlScN/GaN Heterostructures;Advanced Functional Materials;2024-04-24

2. Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodes;AIP Advances;2024-03-01

3. Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers;physica status solidi (b);2021-09-12

4. Analysis of Process Variations in W-Band GaN MMIC PAs Using Nonparametric Statistics;IEEE Transactions on Microwave Theory and Techniques;2021-04

5. Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors;Microelectronics Reliability;2017-03

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