Distributions of residual stress, dislocations, and EL2 in Czochralski‐grown semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337670
Reference17 articles.
1. Contour maps of EL2 deep level in liquid‐encapsulated Czochralski GaAs
2. Factors affecting the spatial distribution of the principal midgap donor in semi‐insulating gallium arsenide wafers
3. GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations
4. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
5. Symmetrical contours of deep level EL2 in liquid encapsulated Czochralski GaAs
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1. Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon;Journal of Applied Physics;2010-09-15
2. Effect of random defect density fluctuations on the Fermi level in highly compensated semiconductors;Materials Science and Engineering: B;1997-06
3. Automated polarimeter–macroscope for optical mapping of birefringence, azimuths, and transmission in large area wafers. Part I. Theory of the measurement;Review of Scientific Instruments;1995-04
4. Nondestructive mapping of carrier concentration and dislocation density inn+‐type GaAs;Applied Physics Letters;1994-10-24
5. AlGaInP multiple quantum wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process;IEEE Journal of Quantum Electronics;1994
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