Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1459750
Reference10 articles.
1. TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices
2. Chemical vapor deposited TiCN: A new barrier metallization for submicron via and contact applications
3. Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma
4. Investigation of the plasma treatment in a multistep TiN MOCVD process
5. TEM studies of the microstructure evolution in plasma treated CVD TiN thin films used as diffusion barriers
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