High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies-Reference-Cited by-同舟云学术

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Published:2016-04-14 Issue:14 Volume:119 Page:145702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Reddy Pramod¹^ORCID,Washiyama Shun¹,Kaess Felix¹,Hayden Breckenridge M.¹²,Hernandez-Balderrama Luis H.¹,Haidet Brian B.¹,Alden Dorian¹^ORCID,Franke Alexander¹,Sarkar Biplab¹,Kohn Erhard¹,Collazo Ramon¹,Sitar Zlatko¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA

2. REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303, USA

Funder

National Science Foundation (NSF)

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jap/119/14/1.4945775.pdf?itemId=/content/aip/journal/jap/119/14/10.1063/1.4945775&mimeType=pdf&containerItemId=content/aip/journal/jap

Reference42 articles.

1. Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

2. High Voltage Vertical GaN p-n Diodes With Avalanche Capability

3. Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN

4. The Preparation and Properties of Aluminum Nitride Films

5. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

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