Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365392
Reference25 articles.
1. Band-structure-dependent transport and impact ionization in GaAs
2. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
3. Thresholds of impact ionization in semiconductors
4. Semiclassical study of the wave vector dependence of the interband impact ionization rate in bulk silicon
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