Hole effective mass in remote doped Si/Si1−xGexquantum wells with 0.05≤x≤0.3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112392
Reference16 articles.
1. Cyclotron effective mass of holes in Si1−xGex/Si quantum wells: Strain and nonparabolicity effects
2. Electrical and physical properties of high-Ge-content Si/SiGep-type quantum wells
3. Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials
4. Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two‐dimensional hole gas
5. Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on
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1. Magnetotransport studies of SiGe-basedp-type heterostructures: Problems with the determination of effective mass;Low Temperature Physics;2012-12
2. High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces;Applied Physics Letters;2012-06-18
3. High hole mobilities in fully-strained Si/sub 1-x/Ge/sub x/ layers (0.3>x>0.4) and their significance for SiGe pMOSFET performance;IEEE Transactions on Electron Devices;2001
4. Hole subband non-parabolicities in strained Si/Si1−xGexquantum wells;Superlattices and Microstructures;1998-12
5. Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface;Acta Physica Polonica A;1998-09
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