Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two‐dimensional hole gas
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111147
Reference18 articles.
1. Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials
2. Modulation doping in GexSi1−x/Si strained layer heterostructures
3. Two‐dimensional hole gas in Si/Si0.85Ge0.15/Si modulation‐doped double heterostructures
4. Cyclotron resonance studies of two‐dimensional holes in strained Si1−xGex/Si quantum wells
5. Effective mass and collision time of (100) Si surface electrons
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