Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3229998
Reference14 articles.
1. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition
2. Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures
3. Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures
4. Effective mass in remotely doped Ge quantum wells
5. Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures
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