Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1558895
Reference11 articles.
1. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition
2. Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures
3. Mobility spectrum computational analysis using a maximum entropy approach
4. Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures
5. Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility
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