Cyclotron effective mass of holes in Si1−xGex/Si quantum wells: Strain and nonparabolicity effects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111830
Reference15 articles.
1. Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates
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3. Energy-band structure for strainedp-typeSi1−xGex
4. Energy-band structure for strainedp-typeSi1−xGex
5. Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on
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2. Analysis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor;Semiconductor Science and Technology;2002-06-17
3. Hole subband non-parabolicities in strained Si/Si1−xGexquantum wells;Superlattices and Microstructures;1998-12
4. SiGe heterostructures for FET applications;Journal of Physics D: Applied Physics;1998-06-21
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