Interactions of amorphous TaxCu1−x(x=0.93 and 0.80) alloy films with Au overlayers and GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97727
Reference12 articles.
1. Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's
2. Properties of Au/W/GaAs Schottky barriers
3. Diffusion barriers in thin films
4. Performance of titanium nitride diffusion barriers in aluminum–titanium metallization schemes for integrated circuits
5. Ion‐implanted, electron‐beam annealed TiN films as diffusion barriers for Al on Si shallow junctions
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interactions between binary metallic alloys and Si, GeSi and GaAs;Materials Science Reports;1992-01
2. Summary Abstract: Surface analysis of amorphous Ta–Cu thin films deposited on GaAs;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1988-05
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