On the prediction of electromigration voiding using stress-based modeling

Author:

Duan Q. F.,Shen Y.-L.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Reliability Evaluation with Heat Dissipation Effect for a Ka-band MMIC PA;Proceedings of the 2nd International Conference on Telecommunications and Communication Engineering - ICTCE 2018;2018

2. Study of complete interconnect reliability for a GaAs MMIC power amplifier;International Journal of Electronics;2017-11-29

3. Influence of local thermal dissipation on electromigration in an Al thin-film line;Microelectronics Reliability;2016-10

4. Interconnect reliability analysis of ULSI using automated model generation algorithm;International Journal of RF and Microwave Computer-Aided Engineering;2016-03-17

5. Growth behavior of voids randomly distributed at grain boundary on thin metal film with bamboo microstructures under thermal residual stress field and electric field;EPL (Europhysics Letters);2015-09-01

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