Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors-Reference-Cited by-同舟云学术

Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Published:2011-08-29 Issue:9 Volume:99 Page:093504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Xinke,Kim Fong Low Edwin,Pan Jisheng,Liu Wei,Leong Teo Kie,Tan Leng-Seow,Yeo Yee-Chia

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3633104

Reference17 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors

3. High temperature power performance of AlGaN∕GaN high-electron-mobility transistors on high-resistivity silicon

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