High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1886902
Reference9 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
2. Compact holographic memory system using a one-beam geometry in a photorefractive crystal
3. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
4. Recess dependent breakdown behavior of GaAs-HFETs
5. Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
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