Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications-Reference-Cited by-同舟云学术

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Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

Published:2024 Issue: Volume:12 Page:36447-36456
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Islam Naeemul¹^ORCID,Packeer Mohamed Mohamed Fauzi¹^ORCID,Ahmad Norhawati²,Isa Muammar Mohamad²^ORCID,Rahim Alhan Farhanah Abd³^ORCID,Ahmeda Khaled⁴^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang, Malaysia

2. Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Arau, Perlis, Malaysia

3. Faculty of Electrical Engineering, Universiti Teknologi MARA, Cawangan Pulau Pinang, Permatang Pauh, Pulau Pinang, Malaysia

4. Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K.

Funder

Ministry of Higher Education Malaysia for funding through the Fundamental Research Grant Scheme

Universiti Sains Malaysia Research University Incentive

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6287639/10380310/10460543.pdf?arnumber=10460543

Reference49 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

3. Gallium Nitride Power Devices: A State of the Art Review

4. The 2018 GaN power electronics roadmap

5. GaN-based power devices: Physics, reliability, and perspectives

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