Thickness inhomogenities in the organometallic chemical vapor deposition of GaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3029742
Reference23 articles.
1. Conditions for uniform growth of GaAs by metalorganic chemical vapor deposition in a vertical reactor
2. On the flow regimes in VPE reactors
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4. Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
5. Mathematical Modeling of Epitaxial Silicon Growth in Pancake Chemical Vapor Deposition Reactors
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1. Probing grain boundaries in ceramic scintillators using x-ray radioluminescence microscopy;Journal of Applied Physics;2012-01
2. An Organometallic Future in Green and Energy Chemistry?;Organometallics;2011-01-04
3. Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-07
4. Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition;Applied Physics Letters;2009-06-22
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