Conditions for uniform growth of GaAs by metalorganic chemical vapor deposition in a vertical reactor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334370
Reference11 articles.
1. The Use of Metal-Organics in the Preparation of Semiconductor Materials
2. The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structures
3. Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
4. Epitaxial Deposition of GaAs in the Ga (CH3)3AsH3H2-System (IV) Thermodynamic and Kinetic Considerations
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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-07
3. Thickness inhomogenities in the organometallic chemical vapor deposition of GaP;Applied Physics Letters;2008-11-17
4. Metalorganic chemical vapor deposition for optoelectronic devices;Proceedings of the IEEE;1997
5. On the rate and uniformity of CdTe deposition in an impinging jet reactor: experimental results;Journal of Crystal Growth;1992-09
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