Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Numerical Analysis of Gas Flow Instabilities in Simplified Vertical HVPE GaN Reactors;Crystals;2022-09-02
2. Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth;physica status solidi (a);2019-12-17
3. Numerical analysis on the origin of thickness unevenness and formation of pits at GaN thin film grown by HVPE;Journal of Crystal Growth;2016-09
4. Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor;Journal of Crystal Growth;2015-12
5. Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy;Journal of Applied Physics;2013-10-21
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