The effects of oxygen dose on the formation of buried oxide silicon‐on‐insulator
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339490
Reference14 articles.
1. Optimization of oxygen-implanted silicon substrates for CMOS devices by electrical characterization
2. Simox technology and its application to CMOS LSIS
3. Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation
4. Influence of substrate temperature on the formation of buried oxide and surface crystallinity during high dose oxygen implantation into Si
5. Microstructure of silicon implanted with high dose oxygen ions
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1. Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates;Japanese Journal of Applied Physics;1998-02-15
2. Measurements of film carrier lifetimes in silicon‐on‐insulator wafers by a contactless dual‐beam optical modulation technique;Applied Physics Letters;1992-09-21
3. A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. I. Capacitance and conductance techniques;IEEE Transactions on Electron Devices;1992-07
4. Measurements of substrate carrier lifetimes in silicon-on-insulator wafers by a contactless dual-beam optical modulation technique;Solid-State Electronics;1992-07
5. Determination of generation lifetime and interface state density using a pulsed silicon-insulator-silicon capacitor;Solid-State Electronics;1992-03
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